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2SA2018 / 2SA2030
Transistors
Low frequency transistor
2SA2018 / 2SA2030
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
!Applications For switching, for muting.
!External dimensions (Units : mm)
2SA2018
(1) (2)
0.2 0.5 0.5
!Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) 250mV At IC = 200mA / IB = 10mA
0.3
(3)
0.8 1.6
0.15
0.2
0.55
0.1Min.
ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416
0~0.1
(1) Emitter (2) Base (3) Collector
2SA2030
!Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature
Single pulse, PW=1ms
0.2
1.2 0.32
1.2 0.8
(2) (3) (1)
0.2
0.4 0.4 0.8
Symbol VCBO VCEO IC ICP PC Tj Tstg
Limits 15 12 500 1 150 150 -55~+150
Unit V V mA A mW C C
0.13 0~0.1
0.5
0.15Max.
ROHM : VMT3
0.22
(1) Base (2) Emitter (3) Collector
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob Min. 15 12 6 270 Typ. 100 260 6.5 Max. 100 680 250 Unit V V V nA mV MHz pF IC=10A IC=1mA IE=10A VCB=15V VCE=2V / IC=10mA IC=200mA / IB=10mA VCE=2V , IE=10mA , fT=100MHz VCB=10V , IE=0A , f=1MHz Conditions
Transition frequency Output capacitance
!Packaging specifications and hFE
Package name Code Type 2SA2018 2SA2030 hFE Basic ordering unit (pieces) TL 3000 Taping T2L 8000 -
0.7
1.0
1.6
2SA2018 / 2SA2030
Transistors
!Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1000
1000
1000
VCE=2V
COLLECTOR CURRENT : IC (mA)
500
Ta=125C
500
VCE=2V
IC/IB=20
500
Ta=25C
DC CURRENT GAIN : hFE
200
200
Ta= -40C
200
100
100
100
Ta=125C
50
50
50
Ta=25C
20
Ta=125 C
20
20
Ta= -40C
Ta=25C
Ta= -40C
10
10
10
5
5
5
2
2
2
1
1
0
0.5
1.0
1.5
1
2
5
10
20
50
100
200
500
1000
1
1
2
5
10
20
50
100
200
500
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current ( I )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
10000
1000
5000
TRANSITION FREQUENCY : fT (MHz)
Ta=25C
500
IC/IB=20
500
VCE=2V Ta=25C
200
2000
200
Ta=25C
1000
Ta= -40C
100
100
50
500
50
IC/IB=50 IC/IB=20 IC/IB=10
Ta=125C
200
20
20
10
100
10
5
50
5
2
20
2
1
10
1
2
5
10
20
50
100
200
500
1000
1
2
5
10
20
50
100
200
500
1000
1
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Base-emitter saturation voltage vs. collector current
Fig.6 Gain bandwidth product vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
500
IE=0A f=1MHz Ta=25C
200
100
50
Cib
20 10
Cob
5
2 1
0.1
0.2
0.5
1
2
5
10
20
50
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

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